SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

According to an exemplary embodiment, a method of forming a vertical structure is provided. The method comprises the steps of: providing a substrate; forming a first oxide layer over the substrate; forming a first dummy layer over the first oxide layer; etching the first oxide layer and the first dummy layer to form a recess; forming a second dummy layer in the recess (and further performing CMP on the second dummy layer and stopped on the first dummy layer); removing the first dummy layer; removing the first oxide layer; and etching the substrate to form the vertical structure. According to an exemplary embodiment, a semiconductor device is provided. The semiconductor device comprises: the substrate; an STI embedded in the substrate; and a vertical transistor having a source substantially aligned with the STI.