| 摘要 |
According to the present invention, a method for manufacturing a semiconductor device comprises the following processes: forming a first solid layer having a thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of a first element and carbon by supplying a raw material to a substrate under a condition where the raw material having chemical bonds of the first element and carbon is pyrolyzed and at least a part of the chemical bonds of the first element and carbon contained in the raw material are maintained without being broken; and forming a second solid layer by reforming the first solid layer by supplying a reactant containing a plasma-excited second element, or supplying plasma-excited inert gas and a reactant containing the second element, which is not plasma-excited, to the substrate. By performing a cycle including the processes, which are performed not at the same time, the predetermined number of times, a layer containing a first element, second element, and carbon is formed on a substrate. |
