| 摘要 |
A transistor includes a substrate which has a source region and a drain region which are separated from each other, and a channel region which connects the source region and the drain region, a gate insulating layer structure which is formed on the substrate, a source electrode and a drain electrode which are respectively in the source and the drain on the gate insulating layer structure, a channel which is formed in a channel region on the gate insulating layer structure, and a gate electrode which electrically turns on/off the channel. The gate insulating layer structure includes at least a pair of a low-k dielectric and a high-k dielectric formed in the channel region. |
