| 发明名称 |
Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants |
| 摘要 |
A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer. |
| 申请公布号 |
US9219464(B2) |
申请公布日期 |
2015.12.22 |
| 申请号 |
US201314069312 |
申请日期 |
2013.10.31 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd. |
发明人 |
Choy John;Feng Chris;Nikkel Phil;Grannen Kevin;Lamers Kristina |
| 分类号 |
H03H9/15;H03H9/54;H03H9/02;B81B7/02;H03H9/13;H03H9/17 |
主分类号 |
H03H9/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An acoustic resonator, comprising:
a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides comprises a cantilevered portion; a piezoelectric layer disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements, wherein the cantilevered portion extends above the piezoelectric layer; and a gap between the cantilevered portion and the piezoelectric layer. |
| 地址 |
Singapore SG |
