Germanium-based quantum well devices

摘要

A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.

主权项

1. A device, comprising:
a lower barrier region comprising a large band gap material; a quantum well channel region comprising germanium on the lower barrier region; an upper barrier region comprising a large band gap material on the quantum well region; a spacer region on the quantum well channel region; an etch stop region on the spacer region, the etch stop region comprising silicon and being substantially free from germanium; a gate dielectric on the etch stop region; a gate electrode on the gate dielectric; a doped region on the lower barrier region, the doped region comprising silicon germanium doped with boron; and a lower spacer region comprising silicon germanium on the doped region and under the quantum well channel region.