发明名称 |
High-k dielectrics with a low-k interface for solution processed devices |
摘要 |
A device, including a substrate, an electronically active component on the substrate, an interface dielectric on the semiconductor, and a relaxor dielectric on the interface dielectric. The relaxor dielectric includes a surfactant that is solid at room temperature. |
申请公布号 |
US9219126(B2) |
申请公布日期 |
2015.12.22 |
申请号 |
US201414262491 |
申请日期 |
2014.04.25 |
申请人 |
Palo Alto Research Center Incorporated |
发明人 |
Whiting Gregory;Ng Tse Nga;Hsieh Bing R. |
分类号 |
H01L21/31;H01L21/469;H01L29/51;H01L29/78;H01L21/28;H01L27/06 |
主分类号 |
H01L21/31 |
代理机构 |
Marger Johnson |
代理人 |
Marger Johnson |
主权项 |
1. A device, comprising:
a substrate; an electronically active component on the substrate; an interface dielectric at least partially on the electrically active component; and a relaxor dielectric on the interface dielectric, wherein the relaxor dielectric includes a surfactant that is solid at room temperature and has a higher dielectric constant than the interface dielectric. |
地址 |
Palo Alto CA US |