发明名称 High-k dielectrics with a low-k interface for solution processed devices
摘要 A device, including a substrate, an electronically active component on the substrate, an interface dielectric on the semiconductor, and a relaxor dielectric on the interface dielectric. The relaxor dielectric includes a surfactant that is solid at room temperature.
申请公布号 US9219126(B2) 申请公布日期 2015.12.22
申请号 US201414262491 申请日期 2014.04.25
申请人 Palo Alto Research Center Incorporated 发明人 Whiting Gregory;Ng Tse Nga;Hsieh Bing R.
分类号 H01L21/31;H01L21/469;H01L29/51;H01L29/78;H01L21/28;H01L27/06 主分类号 H01L21/31
代理机构 Marger Johnson 代理人 Marger Johnson
主权项 1. A device, comprising: a substrate; an electronically active component on the substrate; an interface dielectric at least partially on the electrically active component; and a relaxor dielectric on the interface dielectric, wherein the relaxor dielectric includes a surfactant that is solid at room temperature and has a higher dielectric constant than the interface dielectric.
地址 Palo Alto CA US