发明名称 Modification of nanoimprint lithography templates by atomic layer deposition
摘要 Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.
申请公布号 US9217200(B2) 申请公布日期 2015.12.22
申请号 US200711963448 申请日期 2007.12.21
申请人 ASM INTERNATIONAL N.V. 发明人 Haukka Suvi P.;Elers Kai-Erik
分类号 C23C16/00;C23C16/455;C23C16/06 主分类号 C23C16/00
代理机构 Knobbe, Martens, Olson & Bear LLP 代理人 Knobbe, Martens, Olson & Bear LLP
主权项 1. A method for enhancing the ability of a patterned nanoimprint lithography (NIL) template to release from a cured imprint resist comprising growing a metallic thin film on the template by an atomic layer deposition (ALD) process, wherein the ALD process comprises alternately and sequentially contacting the template with a first reactant comprising a metal or semimetal and a second reactant, thereby forming the metallic thin film over the template, wherein the template is formed by patterning prior to growing the thin film on the template.
地址 Bilthoven NL