| 发明名称 | Method for forming a semiconductor device | ||
| 摘要 | A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte. | ||
| 申请公布号 | US9218958(B2) | 申请公布日期 | 2015.12.22 |
| 申请号 | US201314102107 | 申请日期 | 2013.12.10 |
| 申请人 | Infineon Technologies AG | 发明人 | Schulze Hans-Joachim;Zundel Markus;Mauder Anton;Meiser Andreas;Hirler Franz;Weber Hans |
| 分类号 | H01L21/425;H01L21/02;H01L21/265;H01L21/321 | 主分类号 | H01L21/425 |
| 代理机构 | Eschweiler & Associates, LLC | 代理人 | Eschweiler & Associates, LLC |
| 主权项 | 1. A method for forming a semiconductor device, the method comprising: carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate; reducing a number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte; and exchanging the electrolyte used for carrying out the anodic oxidation for an electrolyte comprising less or no oxidizing ions to reduce the number of remaining oxidizing ions within the oxidized surface region. | ||
| 地址 | Neubiberg DE | ||