Memory device

摘要

A memory device includes: a memory element which includes three or more resistance states by using plural magneto-resistive elements each having a first resistance state or a second resistance state; and a comparison and determination circuit which compares the resistance states of the memory element before and after one first magneto-resistive element from among the plural magneto-resistive elements in the memory element is rewritten into the first resistance state, and determines the resistance state of the memory element in accordance with the comparison result.

主权项

1. A memory device, comprising:
a memory element which includes three or more resistance states by using plural magneto-resistive elements each having a first resistance state or a second resistance state; and a comparison and determination circuit which compares a resistance value of the memory element before one first magneto-resistive element from among the plural magneto-resistive elements in the memory element is rewritten into the first resistance state and a resistance value of the memory element after the first magneto-resistive element is rewritten into the first resistance state, and determines the resistance state of the memory element in accordance with the comparison result, wherein the comparison and determination circuit determines that a resistance state of the first magneto-resistive element in the memory element before the first magneto-resistive element is rewritten into the first resistance state is in the first resistance state when the resistance value of the memory element before the first magneto-resistive element is rewritten into the first resistance state and the resistance value of the memory element after the first magneto-resistive element is rewritten into the first resistance state are the same, and determines that a resistance state of the first magneto-resistive element in the memory element before the first magneto-resistive element is rewritten into the first resistance state is in the second resistance state when the resistance value of the memory element before the first magneto-resistive element is rewritten into the first resistance state and the resistance value of the memory element after the first magneto-resistive element is rewritten into the first resistance state are not the same.