发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, AND TRANSFER SHEET AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce loss of shape in a pattern which is formed in a semiconductor device in the past by coating a phase transition material as a heat radiation material, even when an impact is made on the pattern formed by the phase transition material in a liquid state in an atmosphere where temperature control is not satisfactory.SOLUTION: A semiconductor device comprises: a semiconductor element mounted inside a semiconductor module 10; a heat radiation surface 13 formed on the semiconductor module 10, for radiating heat generated by the semiconductor element to a radiator; a pattern 14 which is composed of a phase transition material and formed on the heat radiation surface; and a film 15 as a first film for covering the pattern 14.
申请公布号 JP2015230949(A) 申请公布日期 2015.12.21
申请号 JP20140115871 申请日期 2014.06.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 YONEYAMA REI;HARADA KOZO;OSHIMA ISAO;OTSUBO YOSHITAKA;KAWAHARA RENA
分类号 H01L23/36;H05K7/20 主分类号 H01L23/36
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