METHOD OF MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride single crystal having high crystallinity and purity.SOLUTION: A method of manufacturing a group III nitride single crystal includes: a single crystal growing process S1 of growing an aluminum nitride single crystal 6 at a seed crystal 5 by a sublimation recrystallization method; a slicing process S2 of slicing the aluminum nitride single crystal 6 obtained in the single crystal growing process S1 along a C plane so as to obtain a wafer 61; a CMP processing process S4 of performing CMP processing on a principal surface 611 of the wafer 61; a high/low difference measurement process S5 of determining whether a high/low difference of unevenness of the principal surface 611 is less than a predetermined value A; an individual-piece forming process S7 of obtaining the wafer 61 in the form of a plurality of individual pieces 612; and a rearrangement process S8 of arranging the plurality of individual pieces 612 whose high/low difference is less than the predetermined value A orderly on a support substrate 80, the processes S1-S8 being repeated while the plurality of individual pieces 612 arranged on the support substrate 80 are used as seed crystals 5 until it is determined in the high/low difference measurement process S4 that the high/low difference of the overall principal surface 611 is less than the predetermined value A.