| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method that adhesively attaches a protection tape to the surface of a wafer having a reformed layer formed along a parting scheduled line, and grinds the back surface of the wafer with grinding water while supplying the grinding water, thereby setting thickness of the wafer to a predetermined thickness, thereby preventing pollution of the side surface and front surface of each device when the wafer is parted into individual devices.SOLUTION: A wafer processing method comprises a reformed layer forming step of irradiating a laser beam having a wavelength transmissible through a wafer 2 along a parting scheduled line while the focal point of the laser beam is located inside the wafer 2, thereby forming a reformed layer along the parting scheduled line inside the wafer, and a back surface grinding step of grinding the back surface 2b of the wafer while supplying grinding water, thereby setting the thickness of the wafer to a predetermined thickness, and parting the wafer into individual devices along the parting scheduled line with the reforming layer set as a breaking starting point. A protection film forming step of coating liquid resin on the surface of the wafer to form a protection film 300, and a protection tape attaching step of adhesively attaching a protection tape 4 to the surface of the protection film are executed before the back surface grinding step is executed. |
