发明名称 POWER SEMICONDUCTOR DEVICE AND RESIN-SEALED MOTOR
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor device that has excellent heat radiation performance and facilitates miniaturization and cost reduction.SOLUTION: In a power semiconductor device 100a, a power IC chip 1 on which a power semiconductor element for controlling on/off of a large current is formed and an integrated circuit chip 2 which is larger than the power IC chip 1 and on which no power semiconductor element is formed are disposed so that the principal surfaces of the power IC chip 1 and the integrated circuit chip 2 face each other. An electrode pad 5a formed on the principal surface of the power IC chip 1 and an electrode pad 5b formed on the principal surface of the integrated circuit chip 2 are bonded together via an electrically conductive connection member 3a. On the principal surface of the integrated circuit chip 2, a projecting terminal 4 having an approximately same height as that of the power IC chip 1 is formed in a portion where the power IC chip 2 is not disposed.
申请公布号 JP2015230990(A) 申请公布日期 2015.12.21
申请号 JP20140117042 申请日期 2014.06.05
申请人 HITACHI LTD;HITACHI POWER SEMICONDUCTOR DEVICE LTD 发明人 KONO KENYA;SAKURAI KENJI;ISOBE TASUKE;UTSUMI TOMOYUKI
分类号 H01L25/07;H01L25/065;H01L25/18 主分类号 H01L25/07
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