发明名称 QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING RESIST UNDERLAY FILM, AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a quaternary ammonium salt compound that suppresses reflection of a resist underlay film particularly in a KrF exposure process by adding the compound to a composition for forming a resist underlay film, compared to a conventional silicon-containing resist underlay film, and that improves a pattern profile.SOLUTION: The quaternary ammonium salt compound is represented by general formula (A-1) below. In the formula, R, R, and Rrepresent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, in which a part of or the whole hydrogen atoms may be replaced by a hydroxyl group, an alkoxy group, or a halogen atom, or may include at least one of a carbonyl group and an ester bond; Rrepresents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, in which a part of or the whole hydrogen atoms may be replaced by an alkoxy group or a halogen atom, or may have at least one of an ether bond, a carbonyl group, an ester bond, and an amide bond; and Arepresents a non-nucleophilic counter ion.
申请公布号 JP2015229640(A) 申请公布日期 2015.12.21
申请号 JP20140115506 申请日期 2014.06.04
申请人 SHIN ETSU CHEM CO LTD 发明人 OGIWARA TSUTOMU;WATANABE TAKESHI
分类号 C07C211/63;C07C53/18;C07C63/08;C07C219/14;C07C229/12;G03F7/004;G03F7/075;G03F7/11;G03F7/26;H01L21/027 主分类号 C07C211/63
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