SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit fusion of resin filled in a contact hole when forming a resist pattern for wiring formation.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a contact hole 112 in an interlayer insulation film (lamination of SiOC and TEOS) on a semiconductor substrate; forming an uncured resin film 113 in the contact hole and on the interlayer insulation film; performing etchback on the uncured resin film 113 at a frequency of not less than 0.4 MHz and not more than 13.56 MHz and at a pressure of not less than 0.1 Pa and not more than 35 Pa to remove the resin film on the interlayer insulation film; and forming a resist pattern 114 having a shape of a wiring groove on the interlayer insulation film in a state of maintaining a resin film 117 in the contact hole after the etchback.