发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve performance of a solid state image element which is formed by performing division exposure in which the whole chip is processed by a plurality of exposures, and in which each of a plurality of pixels arranged in a pixel array part has a plurality of photo diodes.SOLUTION: In the division exposure which is performed during manufacturing of a solid state image element, a border line DL dividing an exposure region is specified so as to be positioned between a photodiode PD1 and a photodiode PD2 arrayed in a first direction in an active region AR of a pixel PE2, and also specified so as to be along a second direction orthogonal to the first direction.
申请公布号 JP2015230962(A) 申请公布日期 2015.12.21
申请号 JP20140116356 申请日期 2014.06.05
申请人 RENESAS ELECTRONICS CORP 发明人 KIMURA MASATOSHI
分类号 H01L27/146;G03F7/20;H01L21/027 主分类号 H01L27/146
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