| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can solve a problem that dispersion in flatness occurs within a wafer surface.SOLUTION: A method of manufacturing a semiconductor device prepares a wafer on which an insulator having plural portions serving as semiconductor devices and plural openings is provided, forming an embedding member in the plural openings and on the insulator, removing at least a part of the embedding member and flattening the embedding member. The plural portions have a first part and a second part nearer to the outside of the wafer than the first part, and the first part and the second part have a first area and a second area at a position different from the position of the first area. The plural openings are arranged at a higher density in the first area than that in the second area. In the step of removing at least a part, the embedding member located in the second area of the first part is removed, and the embedding member located in the second area of the second part is removed. A first removal amount at which the embedding member located in the second area of the first part is removed is different from a second removal amount at which the embedding member located in the second area of the second part is removed. |
