| 摘要 |
PROBLEM TO BE SOLVED: To prevent increase in parasitic capacitance in a redundancy relieving circuit.SOLUTION: A semiconductor device includes: a first area where a first circuit is formed; a second area where a second circuit receiving an output signal of the first circuit is formed; a third area where a third circuit is formed; a fourth area where a fourth circuit receiving an output signal of the third circuit is formed; and a first address signal wiring area and a second address signal wiring area each of which extends in a first direction and is arranged at a height different from that of the first area or the fourth area. The first area and the second area are arranged side by side in the second direction orthogonal to the first direction; the third area and the fourth area are arranged side by side in the second direction in parallel to the first area and the second area; the first area and the fourth area are arranged at a position which intersects with the first address signal wiring area, but which does not intersect with the second address signal wiring area; and the second area and the third area are arranged at a position which intersects with the second address signal wiring area, but which does not intersect with the first address signal wiring area. |
