| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP polishing liquid for polishing at high speed a non-oxide single crystal substrate high in hardness and chemical stability such as a silicon carbide single crystal substrate and making a surface property smooth and excellent in atom level of a crystal.SOLUTION: The CMP polishing liquid contains a polishing agent, an oxidant containing a transition metal having an oxidation reduction potential of 0.5 V or more and a dispersant, polishing particles (10) used for the polishing agent is a particle having a core shell structure, a core layer (2) contains oxide of at least one element selected from Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, In, Sn, Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, W, Bi, Th and an alkali earth metal and a shell layer (4) contains cerium oxide. |
