| 摘要 |
The present invention is to provide a wafer processing method which can fracture an adhesive film for die bonding installed on a rear surface of a semiconductor wafer divided into individual semiconductor devices by a dicing-before-grinding method along each divided semiconductor device, and can prevent the minutely fractured adhesive film from being attached to a surface of the semiconductor device directly during a fracturing process. According to the wafer processing method, a plurality of lines for division is formed on the surface, and a device is formed on each area partitioned along the lines for division. The wafer processing method includes: a dividing groove forming process of forming a dividing groove of a depth corresponding to a finishing thickness of a device chip along the lines for division from the surface of the wafer; a rear surface polishing process of dividing the wafer into individual device chips, by exposing the dividing groove outward on a rear surface of the wafer by polishing the rear surface thereof; a process of placing the adhesive film on the rear surface of the wafer, and bonding a dicing tape to the adhesive film; and an adhesive film fracturing process of fracturing the adhesive film along each device chip by expanding the dicing tape. |
