SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To solve a problem to satisfy both of low resistance of a gate electrode and prevention of boron diffusion to a semiconductor substrate.SOLUTION: A semiconductor device comprises: a semiconductor substrate in which a trench is provided; a gate insulation film provided along a surface of the trench; a barrier film which is provided along a surface of the gate insulation film in the trench and restricts transmission of boron; a metallic crystal nucleus film which is provided along a surface of the barrier film in the trench and contains boron; and a metal film embedded in the trench on the metallic crystal nucleus film.