| 摘要 |
A light emitting device according to an embodiment includes: a light emitting structure which includes a first conductivity type semiconductor layer, an active layer under the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer; an insulating layer which has a plurality of opened regions under the second conductivity type semiconductor layer; a contact layer arranged in each opened region of the insulating layer; a reflective layer arranged under the contact layer and the insulating layer; a bonding layer arranged under the reflective layer; a conductive support member arranged under the bonding layer; and a first electrode which is mismatched with the opened regions in a vertical direction on the first conductivity type semiconductor layer. |
