ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
An electronic device is provided. The electronic device according to an embodiment of the present invention includes a semiconductor memory, wherein the semiconductor memory may include: a first magnetic layer having a changeable magnifying direction; a second magnetic layer having a fixed magnifying direction; and a tunnel barrier layer provided between the first and second magnetic layers, wherein the second magnetic layer may include a ferromagnetic matter with Mo added.
申请公布号
KR20150141266(A)
申请公布日期
2015.12.18
申请号
KR20140069524
申请日期
2014.06.09
申请人
SK HYNIX INC.;KABUSHIKI KAISHA TOSHIBA
发明人
KIM, YANG KON;LEE, BO MI;CHOI, WON JOON;KIM, GUK CHEON;WATANABE DAISUKE;NAGAMINE MAKOTO;EEH, YOUNG MIN;UEDA KOJI;NAGASE TOSHIHIKO;SAWADA KAZUYA