METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for fabricating a semiconductor device for improving uniformity of a replacement metal gate. The method for fabricating a semiconductor device comprises the following steps: forming an interlayer insulating layer including a first trench and a second trench which are spaced apart from each other, on a substrate; forming a first dielectric layer along a side surface and a bottom surface of the first trench, and a second dielectric layer along a side surface and a bottom surface of the second trench; forming first and second lower conductive layers on the first and second dielectric layers, respectively; forming first and second capping layers on the first and second lower conductive layers, respectively; performing heat treatment after forming the first and second capping layers; removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment; and forming first and second metal gate structures on the first and second dielectric layers, respectively.