SOLID STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To obtain excellent pixel signals.SOLUTION: A solid state imaging element comprises: a semiconductor substrate on which a photoelectric conversion element converting incident light to an electric charge and a charge holding part temporarily holding the charge photoelectrically converted by the photoelectric conversion element are formed; and a light shielding part including a buried part buried so as to extend to a region at least between the photoelectric conversion element and the charge holding part of the semiconductor substrate. The light shielding part further includes a lid part arranged to cover the charge holding part at least on a rear face side of the semiconductor substrate, which is the side from which the light enters to the photoelectric conversion element. The present technology can be applied to a back-illuminated CMOS sensor, for example.