PHOTOELECTRIC CONVERSION ELEMENT

摘要

A photoelectric conversion element includes an intrinsic layer that is disposed on a semiconductor of a first conductivity type and contains hydrogenated amorphous silicon; and a first-conductivity-type layer containing hydrogenated amorphous silicon of the first conductivity type, a second-conductivity-type layer containing hydrogenated amorphous silicon of a second conductivity type, and an insulating layer, each of which covers a part of the intrinsic layer. A first electrode is disposed on the first-conductivity-type layer with the second-conductivity-type layer therebetween. At least a part of the first electrode is located above a region where the first-conductivity-type layer contacts the intrinsic layer, and at least a part of the second electrode is located above a region where the second-conductivity-type layer contacts the intrinsic layer.

主权项

1. A photoelectric conversion element comprising:
a semiconductor of a first conductivity type; an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon; a first-conductivity-type layer covering a part of the intrinsic layer and containing hydrogenated amorphous silicon of the first conductivity type; a second-conductivity-type layer covering a part of the intrinsic layer and containing hydrogenated amorphous silicon of a second conductivity type; an insulating layer covering a part of the intrinsic layer; a first electrode disposed on the first-conductivity-type layer; and a second electrode disposed on the second-conductivity-type layer, wherein the first electrode is disposed on the first-conductivity-type layer with the second-conductivity-type layer therebetween, at least a part of the first electrode is located above a region where the first-conductivity-type layer contacts the intrinsic layer, and at least a part of the second electrode is located above a region where the second-conductivity-type layer contacts the intrinsic layer.