SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

To enhance reliability and performance of a semiconductor device that has a fully-depleted SOI transistor, while a width of an offset spacer formed on side walls of a gate electrode is configured to be larger than or equal to a thickness of a semiconductor layer and smaller than or equal to a thickness of a sum total of a thickness of the semiconductor layer and a thickness of an insulation film, an impurity is ion-implanted into the semiconductor layer that is not covered by the gate electrode and the offset spacer. Thus, an extension layer formed by ion implantation of an impurity is kept from entering into a channel from a position lower than the end part of the gate electrode.

主权项

1. A semiconductor device comprising a first field effect transistor in a first region,
wherein the first field effect transistor comprises: an SOI substrate that includes a semiconductor substrate, an insulation film on the semiconductor substrate and a semiconductor layer on the insulation film; a first gate electrode formed on the semiconductor layer via a first gate insulation film; a first offset spacer formed on side walls of the first gate electrode; a first extension layer of a first conductivity type that is formed on the semiconductor layer on both sides of the first gate electrode; a first epitaxial layer of the first conductivity type for a source-drain formed on the semiconductor layer on which the first gate electrode and the first offset spacer are not formed, and wherein a width of the first offset spacer is larger than or equal to a thickness of the semiconductor layer and smaller than or equal to a thickness of a sum total of the semiconductor layer and the insulation film.