| 发明名称 |
IN SITU ETCH COMPENSATE PROCESS |
| 摘要 |
A method includes performing an etching on a mask layer to form an opening in the mask layer. The mask layer is a part of a wafer. The method further includes measuring a lateral size of the opening, comparing the lateral size of the opening with a specified range, and performing a compensation etch to compensate for a difference between the lateral size and the specified range. After the compensation etch, a target layer of the wafer is etched to extend the opening into the target layer. |
| 申请公布号 |
US2015364385(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201414302647 |
申请日期 |
2014.06.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Ko-Feng |
| 分类号 |
H01L21/66;H01L21/308 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
performing an etching on a photo resist to form a first opening in the photo resist, wherein the photo resist is in a first wafer; measuring a lateral size of the first opening; comparing the lateral size of the first opening with a specified range; performing a compensation etch on an additional layer underlying the photo resist to compensate for a difference between the lateral size and the specified range and to make an additional lateral size of a second opening in the additional layer to fall into the specified range, wherein the second opening is extended from the first opening; and after the compensation etch, etching a target layer of the first wafer to extend the second opening into the target layer. |
| 地址 |
Hsin-Chu TW |
