Methods of Fabricating Semiconductor Devices and Structures Thereof

摘要

Methods of fabricating semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a gate material stack over a substrate having a first region and a second region. The gate material stack includes a semiconductive gate material. A thickness is altered or a substance is introduced to the semiconductive gate material in the first region or the second region of the substrate. The gate material stack is patterned in the first region and the second region resulting in a first transistor in the first region of the substrate comprising an NMOS FET of a CMOS device and a second transistor in the second region of the substrate comprising an NMOS FET of the CMOS device. The first transistor has a first threshold voltage and the second transistor has a second threshold voltage different than the first threshold voltage.

主权项

1. A method of manufacturing a CMOS device, the method comprising:
forming a gate material stack over a substrate comprising a first region and a second region, the gate material stack including a semiconductive gate material; patterning the gate material stack in the first region and the second region; modifying the semiconductive gate material of the gate material stack in the first region or the second region of the substrate by introducing a substance comprising N, C, In, Fl, or Cl, to the semiconductive gate material; and forming a first transistor in the first region of the substrate and a second transistor in the second region of the substrate, wherein the first transistor and the second transistor form part of the CMOS device.