| 发明名称 |
METHOD OF FORMING THROUGH-SUBSTRATE |
| 摘要 |
A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method including: a first step that forms a first trench from the first surface side of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed. |
| 申请公布号 |
US2015360470(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201514728065 |
申请日期 |
2015.06.02 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Ogata Yoshinao;Minami Seiko;Kato Masataka;Uyama Masaya;Sakai Toshiyasu;Higuchi Hiroshi |
| 分类号 |
B41J2/16 |
主分类号 |
B41J2/16 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method comprising:
a first step that forms a first trench from the first side surface of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed. |
| 地址 |
Tokyo JP |
