发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT |
摘要 |
A method of producing light emitting elements includes providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least the location to which the separation groove extends. |
申请公布号 |
US2015364643(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201514737355 |
申请日期 |
2015.06.11 |
申请人 |
NICHIA CORPORATION |
发明人 |
SUMITOMO Hidetsugu;KASAI Hisashi |
分类号 |
H01L33/00;H01L33/46;H01L33/36 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of producing light emitting elements comprising:
providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side; forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer; forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure; forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least said location to which the separation groove extends. |
地址 |
Anan-shi JP |