发明名称 METHOD FOR DEPOSITING POLYCRYSTALLINE SILICON
摘要 The Siemens process for deposition of polycrystalline silicon in the form of rods in a sealed reactor is improved by, after introduction of deposition gas has ceased, introducing a ventilating gas into the partially sealed reactor, withdrawing a gas stream from the reactor, and monitoring the components in the gas stream withdrawn until a desired concentration of one or more components is reached, and opening the reactor to remove the rods.
申请公布号 US2015364323(A1) 申请公布日期 2015.12.17
申请号 US201414761523 申请日期 2014.01.13
申请人 WACKER CHEMIE AG 发明人 MUELLER Barbara;KOCH Thomas
分类号 H01L21/02;C01B33/035 主分类号 H01L21/02
代理机构 代理人
主权项
地址 Munich DE