发明名称 ELECTRONIC DEVICE WITH TWO PLANAR INDUCTORS
摘要 An electronic device includes a first planar inductor and a second planar inductor. The first planar inductor includes at least a first ring structure and a second ring structure interconnected electrically for generating a first magnetic field having a first direction and a second magnetic field having a second direction respectively, wherein the first direction is different from the second direction. The second planar inductor includes at least a third ring structure and a fourth ring structure interconnected electrically for generating a third magnetic field having a third direction and a fourth magnetic field having a fourth direction respectively, wherein the third direction is different from the fourth direction. The first ring structure at least partially overlaps the third ring structure to form a first overlap region, and the second ring structure at least partially overlaps the fourth ring structure to form a second overlap region.
申请公布号 US2015364243(A1) 申请公布日期 2015.12.17
申请号 US201514722167 申请日期 2015.05.27
申请人 Realtek Semiconductor Corp. 发明人 Yen Hsiao-Tsung;Huang Kai-Yi;Jean Yuh-Sheng;Yeh Ta-Hsun
分类号 H01F27/28 主分类号 H01F27/28
代理机构 代理人
主权项 1. An electronic device, comprising: a first planar inductor, comprising at least a first ring structure and a second ring structure interconnected electrically for generating a first magnetic field having a first direction and a second magnetic field having a second direction respectively, wherein the first direction is different from the second direction; and a second planar inductor, comprising at least a third ring structure and a fourth ring structure interconnected electrically for generating a third magnetic field having a third direction and a fourth magnetic field having a fourth direction respectively, wherein the third direction is different from the fourth direction; wherein the first ring structure at least partially overlaps the third ring structure to form a first overlap region, and the second ring structure at least partially overlaps the fourth ring structure to form a second overlap region.
地址 HsinChu TW
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