发明名称 |
ELECTRONIC DEVICE WITH TWO PLANAR INDUCTORS |
摘要 |
An electronic device includes a first planar inductor and a second planar inductor. The first planar inductor includes at least a first ring structure and a second ring structure interconnected electrically for generating a first magnetic field having a first direction and a second magnetic field having a second direction respectively, wherein the first direction is different from the second direction. The second planar inductor includes at least a third ring structure and a fourth ring structure interconnected electrically for generating a third magnetic field having a third direction and a fourth magnetic field having a fourth direction respectively, wherein the third direction is different from the fourth direction. The first ring structure at least partially overlaps the third ring structure to form a first overlap region, and the second ring structure at least partially overlaps the fourth ring structure to form a second overlap region. |
申请公布号 |
US2015364243(A1) |
申请公布日期 |
2015.12.17 |
申请号 |
US201514722167 |
申请日期 |
2015.05.27 |
申请人 |
Realtek Semiconductor Corp. |
发明人 |
Yen Hsiao-Tsung;Huang Kai-Yi;Jean Yuh-Sheng;Yeh Ta-Hsun |
分类号 |
H01F27/28 |
主分类号 |
H01F27/28 |
代理机构 |
|
代理人 |
|
主权项 |
1. An electronic device, comprising:
a first planar inductor, comprising at least a first ring structure and a second ring structure interconnected electrically for generating a first magnetic field having a first direction and a second magnetic field having a second direction respectively, wherein the first direction is different from the second direction; and a second planar inductor, comprising at least a third ring structure and a fourth ring structure interconnected electrically for generating a third magnetic field having a third direction and a fourth magnetic field having a fourth direction respectively, wherein the third direction is different from the fourth direction; wherein the first ring structure at least partially overlaps the third ring structure to form a first overlap region, and the second ring structure at least partially overlaps the fourth ring structure to form a second overlap region. |
地址 |
HsinChu TW |