DEPOSITION METHOD OF SiCN FILM

摘要

PROBLEM TO BE SOLVED: To provide a deposition method of an SiCN film which enables an SiCN film to be deposited while maintaining a good deposition rate even when a deposition temperature is lowered.SOLUTION: In a deposition method of an SiCN film, an SiCN film is deposited on a processed surface of a processed object. The deposition method of the SiCN film includes: a step 1 where an Si material gas containing an Si material is supplied to a processing chamber in which the processed object is stored; and a step 3 where a gas containing a nitriding agent is supplied to the processing chamber after the step 1 where the Si material gas is supplied. A 1, 2, 3-triazole-based compound is used as the nitriding agent.