RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

主权项

1. A resistive random access memory device comprising:
a first electrode; a solid electrolyte made of metal oxide extending at least partially onto the first electrode; a soluble second electrode, the first and second electrodes being respectively arranged on either side of the solid electrolyte made of metal oxide, the second electrode being configured to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, and an interface layer including
a transition metal from groups 3, 4, 5 or 6 of the periodic table;a chalcogen element;a soluble conductive element; the interface layer extending at least partially onto the solid electrolyte made of metal oxide, the second electrode extending at least partially onto the interface layer.