发明名称 Memory Cell And An Array Of Memory Cells
摘要 A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes. The select device is proximate and electrically coupled to the first electrode. The programmable device is proximate and electrically coupled to the second electrode. The programmable device includes a radially inner electrode having radially outer sidewalls. Ferroelectric material is radially outward of the outer sidewalls of the inner electrode. A radially outer electrode is radially outward of the ferroelectric material. One of the outer electrode or the inner electrode is electrically coupled to the select device. The other of the outer electrode and the inner electrode is electrically coupled to the second electrode. Arrays of memory cells are disclosed.
申请公布号 US2015364565(A1) 申请公布日期 2015.12.17
申请号 US201414305459 申请日期 2014.06.16
申请人 Micron Technology, Inc. 发明人 Ramaswamy Durai Vishak Nirmal;Kinney Wayne;Tiburzi Marco Domenico
分类号 H01L29/51;H01L29/41 主分类号 H01L29/51
代理机构 代理人
主权项 1. A memory cell, comprising: a first electrode and a second electrode; a select device and a programmable device in series with each other between the first and second electrodes, the select device being proximate and electrically coupled to the first electrode, the programmable device being proximate and electrically coupled to the second electrode; and the programmable device comprising: a radially inner electrode having radially outer sidewalls;ferroelectric material radially outward of the outer sidewalls of the inner electrode;a radially outer electrode radially outward of the ferroelectric material; andone of the outer electrode or the inner electrode being electrically coupled to the select device, the other of the outer electrode and the inner electrode being electrically coupled to the second electrode.
地址 Boise ID US