EXPOSURE METHODS USING E-BEAMS AND METHODS OF MANUFACTURING MASKS AND SEMICONDUCTOR DEVICES THEREFROM

摘要

Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.

主权项

1. A method of forming an integrated circuit mask, comprising:
updating integrated circuit mask data by performing at least one of proximity effect correction (PEC) of errors caused by electron-beam proximity effects and mask process correction (MPC) of errors caused during electron-beam exposure of a mask substrate; and writing the integrated circuit mask corresponding to the updated integrated circuit mask data on the mask substrate by exposing the mask substrate to an electron beam.