LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR MANUFACTURING METHOD AND ARRAY SUBSTRATE MANUFACTURING METHOD

摘要

A low temperature polysilicon thin film transistor manufacturing method and array substrate manufacturing method, the manufacturing method comprising: forming a pattern comprising an active layer (2) on a base substrate (2), the active layer comprising low temperature polysilicon (22); forming a gate insulation layer (3) on the active layer; forming a pattern comprising a gate (4) on the gate insulation layer; forming an interlayer insulation layer (5) on the gate, and forming contact holes corresponding to a source electrode (7) and a drain electrode (8) on the interlayer insulation layer and the gate insulation layer via a patterning process; forming low temperature polysilicon at the bottom of the contact holes; and forming a pattern comprising the source electrode and the drain electrode, the source electrode and the drain electrode being connected to the active layer via the contact holes and the low temperature polysilicon at the bottom of the contact holes.