| 摘要 |
<p>The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.</p> |
