METHOD OF MAKING N-TYPE SEMICONDUCTOR LAYER AND METHOD OF MAKING N-TYPE THIN FILM TRANSISTOR

摘要

A method of making N-type semiconductor layer includes following steps. A semiconductor carbon nanotube layer is provided. A hafnium oxide layer is deposited on the semiconductor carbon nanotube layer via atomic layer deposition, wherein the atomic layer deposition includes following substeps. The semiconductor carbon nanotube layer is located into an atomic layer deposition system. The semiconductor carbon nanotube layer is heated to a temperature ranging from about 140° C. to about 200° C. A protective gas is continuously introduced into the atomic layer deposition system. The hafnium oxide layer is formed on the semiconductor carbon nanotube layer via introducing hafnium source and water vapor one by one into the atomic layer deposition system in a pulse manner.

主权项

1. A method of making N-type semiconductor layer, the method comprising:
providing a semiconductor carbon nanotube layer; depositing a hafnium oxide layer on the semiconductor carbon nanotube layer via atomic layer deposition, wherein the atomic layer deposition comprises:
locating the semiconductor carbon nanotube layer into an atomic layer deposition system;heating the semiconductor carbon nanotube layer to a temperature ranging from about 140° C. to about 200° C.;introducing a protective gas into the atomic layer deposition system;forming the hafnium oxide layer on the semiconductor carbon nanotube layer via introducing hafnium source and water vapor one by one into the atomic layer deposition system in a pulse manner, wherein the hafnium source and the water vapor are carried by a carrier gas, a first pulse time of the hafnium source ranges from about 0.02 seconds to about 0.03 seconds, and a second pulse time of the water vapor ranges from about 0.010 seconds to about 0.015 seconds.