METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-POLAR III-NITRIDE SEMICONDUCTORS WITH HIGH INTERFACE QUALITY AND TUNABLE FIXED INTERFACE CHARGE

摘要

A method of fabricating a Ill-nitride semiconductor device, including growing an Ill-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the Ill-nitride semiconductor.