IMAGING DEVICE

摘要

Provided is a solid-state imaging device that has good production properties and an improved dynamic range. The imaging device comprises a photoelectric conversion element that has an i-type semiconductor layer, a functional element, and wiring, and is preferably configured so that the area in which the functional layer, the wiring, and the i-type semiconductor layer overlap in a planar view is 35% or less of the area of the i-type semiconductor in a planar view, more preferably 15% or less, and even more preferably 10% or less. By providing a plurality of the photoelectric conversion elements within the same semiconductor layer, it is possible to eliminate a step in which each of the photoelectric conversion elements is separated. The individual i-type semiconductor layers of the plurality of photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.