发明名称 FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND STORAGE MEDIUM
摘要 Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed.
申请公布号 US2015361550(A1) 申请公布日期 2015.12.17
申请号 US201514731468 申请日期 2015.06.05
申请人 TOKYO ELECTRON LIMITED 发明人 YABE Kazuo;SHIMIZU Akira
分类号 C23C16/455;H01L21/02;C23C16/458 主分类号 C23C16/455
代理机构 代理人
主权项 1. A film formation apparatus configured to obtain a thin film by stacking a molecule layer of oxide on a surface of a substrate loaded onto a table under a vacuum atmosphere formed within a vacuum chamber, the film formation apparatus comprising: a rotation mechanism configured to repeat alternately placing the substrate in a first region and a second region disposed in a circumference direction of the table over the table by rotating the table with respect to the first region and the second region; a raw material gas supply unit configured to supply the first region with a raw material in a gaseous state as a raw material gas so that the raw material is adsorbed to the substrate; a processing space formation member configured to move up and down with respect to the table in order to form a processing space near the substrate placed in the second region, the processing space being isolated from the first region; an atmosphere gas supply unit configured to supply an atmosphere gas for forming an ozone atmosphere including an ozone of a concentration that is equal to or higher than a concentration at which a chain decomposition reaction is generated in the processing space; an energy supply unit configured to forcibly decompose the ozone by supplying an energy to the ozone atmosphere so that active species of oxygen are generated and to obtain the oxide by oxidizing the raw material adsorbed to a surface of the substrate by the active species; a buffer region configured to be connected to the processing space in order to reduce a rise of pressure in the processing space attributable to the decomposition of the ozone, the buffer region being supplied with an inert gas; and a partition unit configured to partition the buffer region from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when the decomposition of the ozone is generated.
地址 Tokyo JP