CAPACITIVE MEMS SENSOR AND METHOD

摘要

A system and method for forming a sensor device includes defining an in-plane electrode in a device layer of a silicon on insulator (SOI) wafer, forming an out-of-plane electrode in a silicon cap layer located above an upper surface of the device layer, depositing a silicide-forming metal on a top surface of the silicon cap layer, and annealing the deposited silicide-forming metal to form a silicide portion in the silicon cap layer.

主权项

1. A method of forming a sensor device, comprising:
defining an in-plane electrode in a device layer of a silicon on insulator (SOI) wafer; forming an out-of-plane electrode in a silicon cap layer located above an upper surface of the device layer by forming at least one non-silicon spacer in the cap layer; depositing a silicide-forming metal on a top surface of the silicon cap layer and on a top surface of the at least one non-silicon spacer; and annealing the deposited silicide-forming metal to form a silicide portion in the silicon cap layer.