| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparation method of a monomer for a photoresist material that has excellent storage stability and excels in characteristics such as high dissolution contrast, acid diffusion controllability, and low roughness not only in a process of forming a positive pattern by conventional alkali development but in a process of forming a positive-negative inversion image by organic solvent development.SOLUTION: The preparation method of a monomer represented by the general formula (1) includes: preparing a metal enolate reagent by allowing a base or a metal selected from group 1A metals, group 2A metals and group 2B metals to react with a specific compound; and reacting the obtained enolate reagent with acyloxy ketone. |
