SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve manufacturing yield of a semiconductor device.SOLUTION: A semiconductor device of cascode connection comprises: a plurality of normally-on junction FETs each created with a material having a band gap larger than that of silicon; and a normally-off MOSFET created with silicon. The above-described semiconductor device has a plurality of junction FET semiconductor chips (semiconductor chip CHP0 and semiconductor chip CHP1) where the plurality of junction FETs are formed in a separated manner and a MOSFET semiconductor chip (semiconductor chip CHP2) where the MOSFET is formed.