| 发明名称 |
CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT |
| 摘要 |
A crystal layered structure includes a Ga2O3 substrate and a nitride semiconductor layer and is capable of providing a light emitting element having high light output and a light emitting element includes this crystal layered structure. The crystal layered structure includes a Ga2O3 substrate a dielectric layer which is formed on the Ga2O3 substrate so as to partially cover the upper surface of the Ga2O3 substrate, and which has a refractive index difference of 0.15 or less relative to the Ga2O3 substrate and a nitride semiconductor layer which is formed on the Ga2O3 substrate with the dielectric layer interposed therebetween, and which is in contact with the dielectric layer and a portion not covered by the dielectric layer on the upper surface of the Ga2O3 substrate. |
| 申请公布号 |
US2015364646(A1) |
申请公布日期 |
2015.12.17 |
| 申请号 |
US201314759178 |
申请日期 |
2013.12.25 |
| 申请人 |
TAMURA CORPORATION ;KOHA CO., LTD. |
发明人 |
MORISHIMA Yoshikatsu;SATO Shinkuro;GOTO Ken;IIZUKA Kazuyuki;KURAMATA Akito |
| 分类号 |
H01L33/22;H01L33/18;H01L33/32 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A crystal layered structure, comprising:
a Ga2O3 substrate; a dielectric layer that is formed on the Ga2O3 substrate so as to partially cover an upper surface of the Ga2O3 substrate and has a refractive index difference of not more than 0.15 relative to the Ga2O3 substrate; and a nitride semiconductor layer that is formed on the Ga2O3 substrate with the dielectric layer interposed therebetween and is in contact with the dielectric layer and a portion not covered by the dielectric layer on the upper surface of the Ga2O3 substrate. |
| 地址 |
Tokyo JP |
