METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

摘要

A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region

主权项

1. A III-nitride semiconductor device, comprising:
a III-nitride substrate of a first conductivity type; a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a first charge density; a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer; and an implanted region in the first III-nitride epitaxial layer, wherein the implanted region of the first III-nitride epitaxial layer is characterized by a second charge density, and wherein the second charge density is lower than the first charge density.