INSULATED GATE BIPOLAR TRANSISTOR

摘要

A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. At least one first region of a second conductivity type is formed at a second side of the semiconductor zone. The at least one first region is opposed to the cell area region. At least one second region of the second conductivity type is formed at the second side of the semiconductor zone. The at least one second region is opposed to the cell area region and has a lateral dimension smaller than the at least first region.

主权项

1. A semiconductor device, comprising:
a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type, the first zone constituting a drift zone; a plurality of charge injection regions of a second conductivity type spaced from one another at a second side of the semiconductor zone; and a semiconductor region of the second conductivity type at the second side of the semiconductor zone and opposed to at least the cell area region, wherein each of the plurality of charge injection regions is enclosed by the semiconductor region of the second conductivity type.