| 摘要 |
A substrate structure including a flexible substrate, a gate line, a gate, an inorganic insulation layer, a semiconductor layer, a source, a drain, an inorganic passivation layer and an organic insulation layer is provided. The gate is electrically connected to the gate line. The inorganic insulation layer covers the gate and exposes a portion of the flexible substrate. The semiconductor layer is disposed on the inorganic insulation layer and disposed corresponding to the gate. The source and the drain extend from the inorganic insulation layer to the semiconductor layer and expose a portion of the semiconductor layer. The inorganic passivation layer covers portions of the source and the drain and directly contacts to the semiconductor layer exposed by the source and the drain. The organic insulation layer covers the source, the drain, the inorganic passivation layer and the flexible substrate exposed by the inorganic insulation layer. |
| 主权项 |
1. A substrate structure, comprising:
a flexible substrate; a gate line, disposed on the flexible substrate; a gate, electrically connected to the gate line, and disposed on the flexible substrate; an inorganic insulation layer, disposed on the flexible substrate, and covering the gate and exposing a portion of the flexible substrate; a semiconductor layer, disposed on the inorganic insulation layer and disposed corresponding to the gate; a source and a drain, extending from the inorganic insulation layer to the semiconductor layer, wherein the source and the drain expose a portion of the semiconductor layer; an inorganic passivation layer, disposed on the source and the drain and covering a portion of the source and a portion of the drain, and directly contacting the semiconductor layer exposed by the source and the drain; and an organic insulation layer, disposed on the flexible substrate, and covering the source, the drain, the inorganic passivation layer and the flexible substrate exposed by the inorganic insulation layer. |
